Yen Ting Lin

Title: Yen Ting Lin: Memory Circuitry Innovation

Introduction

Yen Ting Lin is an inventor associated with Boise, Idaho, and Micron Technology Incorporated. His patent work addresses memory circuitry and methods for forming it.

Latest Patents

Lin is named on 1 patent: “Memory circuitry and methods used in forming memory circuitry.” The patent describes a process for forming transistors with source/drain regions, channels, and conductive gates, then connecting digitline structures to selected source/drain regions. It also details insulating layers formed around the digitlines, an etching step that exposes other source/drain regions, and storage elements electrically coupled to those regions. The disclosure includes both manufacturing methods and memory-circuitry structures.

Career Highlights

Lin’s listed patent reflects work on the fabrication and structure of memory circuitry. The disclosed techniques focus on arranging digitlines, insulating materials, transistors, and storage elements within a memory device.

Collaborations

Ying Rui, identified as a woman, is listed as Lin’s coworker. The patent information provided does not specify her role in the invention or whether she is a co-inventor.

Conclusion

Yen Ting Lin’s patent documents a memory-circuitry approach involving transistor connections, digitline insulation, and storage elements, reflecting his association with semiconductor innovation at Micron Technology Incorporated.