Beijing, China

Yefan Liu

USPTO Granted Patents = 1 

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2016

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1 patent (USPTO):

Title: **Innovator Spotlight: Yefan Liu**

Introduction

Yefan Liu is a distinguished inventor based in Beijing, China. He has made significant contributions to the field of memory technology, reflecting a commitment to advancing electronic innovations that enhance device performance and reliability.

Latest Patents

Yefan Liu holds a patent for his invention titled "Organic Resistive Random Access Memory and a Preparation Method Thereof." This groundbreaking invention reveals an innovative approach to organic resistive random access memory, utilizing a silicon substrate and featuring a MIM (Metal-Insulator-Metal) capacitor structure with a unique vertical memory unit. The structure consists of a top electrode made of aluminum (Al), a bottom electrode of indium tin oxide (ITO), and a functional middle layer of parylene. The preparation method involves multiple depositions of parylene, with aluminum oxide (AlO) deposited once by atomic layer deposition (ALD) between each two layers of parylene. This meticulous control over the deposition area of AlO helps form a critical region conducive to the creation of conductive channels, thereby improving the cycle-to-cycle and device-to-device uniformity without altering the underlying memory structure.

Career Highlights

Yefan Liu is currently associated with Peking University, a prestigious institution known for its research and educational excellence. His work in advancing memory technology is highly regarded and contributes to the university's reputation in the field of innovation.

Collaborations

During his career, Yefan Liu has collaborated with notable colleagues, including Yimao Cai and Wenliang Bai. These partnerships reflect a collaborative spirit that is essential for scientific advancements and the successful development of innovative technologies.

Conclusion

Yefan Liu's dedication to pioneering advancements in memory technology positions him as an influential figure in the innovation landscape. His patented work not only showcases his inventive capabilities but also highlights the importance of collaborative efforts in the pursuit of technological progress. As he continues to contribute to the field, his innovations will undoubtedly inspire future generations of inventors.

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