The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Sep. 30, 2013
Peking University, Beijing, CN;
Yimao Cai, Beijing, CN;
Yefan Liu, Beijing, CN;
Wenliang Bai, Beijing, CN;
Zongwei Wang, Beijing, CN;
Yichen Fang, Beijing, CN;
Ru Huang, Beijing, CN;
Peking University, Beijing, CN;
Abstract
The present invention discloses an organic resistive random access memory and a preparation method thereof. The memory uses silicon as a substrate, and has a MIM capacitor structure having a vertical memory unit, where the MIM structure has a top electrode of Al, a bottom electrode of ITO, and an middle functional layer of parylene, wherein, a parylene layer as the functional layer is formed by performing deposition multiple times, where the deposition of AlOis performed once by ALD between each two deposition of parylene. A critical region which is in favor of forming a conductive channel could be formed by controlling the deposition area of AlO, and further control the electrical characteristics of the memory. Through the present invention, the cycle-to-cycle and device-to-device uniformity could be effectively improved, without changing the basic structure of the memory.