Company Filing History:
Years Active: 2001
Title: Yea-Jer Arthur Chen: Innovator in Plasma Reactor Technology
Introduction
Yea-Jer Arthur Chen is a notable inventor based in Fremont, California. He has made significant contributions to the field of plasma reactor technology, particularly in the area of nitridization processes. His innovative work has led to the development of a patented method that enhances the efficiency of barrier layer formation on substrates.
Latest Patents
Yea-Jer Arthur Chen holds a patent for a process titled "Metal and metal silicide nitridization in a high density, low pressure plasma reactor." This patent describes a nitridization process that involves depositing a layer of metal or metal silicide on a substrate's surface. The substrate is then placed into a high-density, low-pressure plasma reactor, where nitrogen gas is introduced. A plasma is struck under specific conditions to promote the nitridization of the metal layer, resulting in a composition of metal nitride or metal silicon nitride.
Career Highlights
Yea-Jer Arthur Chen is currently employed at Lam Research Corporation, a leading company in semiconductor manufacturing equipment. His work at Lam Research has positioned him as a key player in advancing technologies that are critical to the semiconductor industry. His innovative approach to nitridization processes has the potential to improve the performance and reliability of electronic devices.
Collaborations
Throughout his career, Yea-Jer has collaborated with esteemed colleagues, including Yun-Yen Jack Yang and Ching-Hwa Chen. These collaborations have fostered a productive environment for innovation and have contributed to the advancement of their shared goals in the field of plasma technology.
Conclusion
Yea-Jer Arthur Chen's contributions to plasma reactor technology and his patented nitridization process exemplify the impact of innovation in the semiconductor industry. His work continues to influence advancements in electronic device manufacturing, showcasing the importance of research and development in this field.