Lam Research Corporation

Yea-Jer Arthur Chen

Ching-Hwa Chen

Yun-Yen Jack Yang

A nitridization process to form a barrier layer on a substrate is described. The nitridization process includes depositing a layer of metal or metal silicide on a surface of the substrate, placing the substrate into a high density, low pressure plasma reactor, introducing into the high density low pressure plasma reactor a gas including nitrogen, and striking a plasma in the high density, low pressure plasma reactor under conditions that promote nitridization of at least a portion of the layer of metal or metal silicide to produce a composition of metal nitride or metal silicon nitride, respectively.

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Fremont, CA, United States of America

Yea-Jer Arthur Chen