The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2001
Filed:
Jun. 24, 1997
Yun-Yen Jack Yang, San Jose, CA (US);
Ching-Hwa Chen, Milpitas, CA (US);
Yea-Jer Arthur Chen, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A nitridization process to form a barrier layer on a substrate is described. The nitridization process includes depositing a layer of metal or metal silicide on a surface of the substrate, placing the substrate into a high density, low pressure plasma reactor, introducing into the high density low pressure plasma reactor a gas including nitrogen, and striking a plasma in the high density, low pressure plasma reactor under conditions that promote nitridization of at least a portion of the layer of metal or metal silicide to produce a composition of metal nitride or metal silicon nitride, respectively.