Saitama, Japan

Yasuyuki Ooi

This inventor holds 1 USPTO granted patent. Top assignee: Calsonic Kansei Corporation. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yasuyuki Ooi. Retrieved from https://idiyas.com/inventor/yasuyuki-ooi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Yasuyuki Ooi: Innovator in Semiconductor Technology

Introduction

Yasuyuki Ooi is a notable inventor based in Saitama, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor component that enhances the efficiency of power modules.

Latest Patents

Yasuyuki Ooi holds 1 patent for his invention titled "Semiconductor component and power module." This patent describes a semiconductor component that includes a semiconductor device, an insulating molded portion that encapsulates the semiconductor device, and a terminal connected to the semiconductor device. The design also features a cooler mounted with the insulating molded portion to ensure effective cooling of the semiconductor device.

Career Highlights

Yasuyuki Ooi is currently employed at Calsonic Kansei Corporation, where he continues to innovate in the semiconductor field. His work at the company has allowed him to collaborate with other talented engineers and contribute to advancements in technology.

Collaborations

One of his notable coworkers is Yutaka Satou, with whom he has likely shared insights and expertise in their projects.

Conclusion

Yasuyuki Ooi's contributions to semiconductor technology exemplify the spirit of innovation. His patent reflects a commitment to improving power module efficiency, showcasing his role as a key inventor in this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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