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For the Inventor, By the Inventor

Hyogo, Japan

Yasushi Terada

USPTO Granted Patents = 37

Average Co-Inventor Count = 3.4

ph-index = 23

Forward Citations = 1,305(Granted Patents)


Location History:

  • Itami, JP (1987 - 1989)
  • Hyogo, JP (1988 - 1996)
  • Hyogo-ken, JP (1996 - 1999)

Company Filing History:

goldMedal37 out of 21,351 
 
Mitsubishi Denki Kabushiki Kaisha
 patents

Years Active: 1987-1999

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37 patents (USPTO):Explore Patents
1. 5898606 - Electrically programmable and erasable nonvolatile semiconductor memory (1999-04-27),
2. 5745417 - Electrically programmable and erasable nonvolatile semiconductor memory (1998-04-28),
3. 5659505 - Electrically programmable and erasable nonvolatile semiconductor memory (1997-08-19),
4. 5615149 - Non-volatile semiconductor memory device incorporating data latch and (1997-03-25),
5. 5602778 - Nonvolatile semiconductor memory device with a row redundancy circuit (1997-02-11),
6. 5554868 - Non-volatile semiconductor memory device (1996-09-10),
7. 5548557 - Nonvolatile semiconductor memory device with a row redundancy circuit (1996-08-20),
8. 5544117 - Non-volatile semiconductor memory device with improved collective (1996-08-06),
9. 5521863 - Non-volatile semiconductor memory device incorporating data latch and (1996-05-28),
10. 5485421 - Non-volatile semiconductor memory device incorporating data latch and (1996-01-16),
11. 5428568 - Electrically erasable and programmable non-volatile memory device and a (1995-06-27),
12. 5402382 - Nonvolatile semiconductor memory device capable of erasing by a word (1995-03-28),
13. 5371705 - Internal voltage generator for a non-volatile semiconductor memory device (1994-12-06),
14. 5363330 - Non-volatile semiconductor memory device incorporating data latch and (1994-11-08),
15. 5347490 - Nonvolatile semiconductor memory device (1994-09-13),

Title: Innovations of Yasushi Terada in Semiconductor Memory Technology

Introduction

Yasushi Terada is a prominent inventor based in Hyogo, Japan, with a remarkable record of 37 patents to his name. His contributions to the field of semiconductor memory technology have paved the way for advancements in data storage solutions. Terada's expertise and innovative spirit have made a significant impact on the industry.

Latest Patents

Among his latest innovations, Terada developed a groundbreaking electrically programmable and erasable nonvolatile semiconductor memory. This patented technology utilizes a unique process during the erasing phase where electrons are simultaneously injected into floating gates from the sources of multiple memory cells. As a result, the threshold voltages of these cells are increased. Conversely, during the programming phase, electrons are emitted from the floating gate of a selected memory cell to its drain. This ingenious mechanism reduces the threshold voltage of the chosen cell, enhancing memory efficiency and reliability.

Career Highlights

Yasushi Terada has had a distinguished career at Mitsubishi Denki Kabushiki Kaisha, where he continues to innovate and lead in semiconductor memory research. His extensive experience and dedication to technological advancement have established him as a key figure within the company and the broader field of engineering.

Collaborations

Throughout his career, Terada has collaborated with talented colleagues, including Takeshi Nakayama and Yoshikazu Miyawaki. Their teamwork has fostered a creative environment, spurring the development of advanced technologies and pushing the boundaries of memory storage solutions.

Conclusion

Yasushi Terada's impressive record of patents and his contributions to semiconductor memory technology highlight his role as an influential inventor. His innovative approaches and collaborations with other professionals underscore his commitment to advancing the field, making a lasting impact for future generations in technology.

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