Yasushi Niimura

Title: Yasushi Niimura: Semiconductor Device Inventor

Introduction

Yasushi Niimura is an inventor associated with Fuji Electric Co., Ltd. and based in Matsumoto-city, Japan. His recorded patent work concerns semiconductor device design and manufacturing.

Latest Patents

Niimura is listed as an inventor on 1 patent, titled “Semiconductor Device and Method of Manufacturing Semiconductor Device.” The invention describes a semiconductor device with an active region containing source regions, trenches, gate insulating films, and gate electrodes, alongside a surrounding termination region. In that termination region, a conductive film connected to the gate electrode is insulated from the drift layer by a field oxide film. A contact hole passes through the conductive film and reaches the field oxide film, with the oxide beneath the hole specified as 54 to 85 nanometers thinner than the oxide outside it.

Career Highlights

Niimura’s documented patent contribution focuses on semiconductor device structure and manufacturing. The patent addresses the arrangement of the active and termination regions, including the field oxide film and contact hole.

Collaborations

Niimura’s listed coworker is Kazuya Yamaguchi. Both are associated with the patent concerning the semiconductor device and its manufacturing method.

Conclusion

Yasushi Niimura’s recorded invention reflects work on semiconductor device design, particularly the structure of a device’s termination region and its field oxide film.