Tokyo, Japan

Yasunori Bito

This inventor holds 2 USPTO granted patents. Top assignee: Nec Corporation. Active years: 2000-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yasunori Bito. Retrieved from https://idiyas.com/inventor/yasunori-bito-gcp2jtu5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 50.0

Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 14(Granted Patents)


Company Filing History:


Years Active: 2000-2003

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2 patents (USPTO):Explore Patents

Title: Yasunori Bito: Innovator in Semiconductor Technology

Introduction

Yasunori Bito is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to electronic devices. His work focuses on enhancing the performance and efficiency of field effect transistors and semiconductor devices.

Latest Patents

One of Yasunori Bito's latest patents involves a Field Effect Transistor (FET) that features an epitaxial wafer with an AlGaAs gate contact layer. This design includes a GaAs gate buried layer doped with silicon, an AlGaAs wide-recess stopper layer also doped with silicon, an undoped GaAs layer, and a GaAs cap layer doped with silicon. The structure allows for the formation of an electron accumulation layer on the undoped GaAs layer, which reduces the potential barrier and increases the probability of electron passage through the AlGaAs layer. This innovation results in lower contact resistance and improved mobility of electrons, achieving an ON resistance as low as 1.4 Ω·mm, which is a notable improvement over conventional designs.

Another significant patent by Bito pertains to a method of manufacturing a semiconductor device that effectively reduces leak current. In this process, an InP substrate undergoes NH3 plasma processing, which removes the InP oxide film and allows for the formation of an InN film. The introduction of SiH3 gas and NH3 gas leads to the creation of a SiNx spacer layer on the InN film. The device is completed with the formation of source and drain electrodes, as well as a gate electrode, all protected by a passivation film.

Career Highlights

Yasunori Bito is currently associated with NEC Corporation, a leading company in the field of technology and electronics. His work at NEC has allowed him to push the boundaries of semiconductor innovation and contribute to advancements in electronic devices.

Collaborations

Bito collaborates with Naotaka Iwata, a fellow innovator in the semiconductor field. Their partnership has fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Yasunori Bito's contributions to semiconductor technology through his patents and work at NEC Corporation highlight his role as a key innovator in the industry. His advancements in field

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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