Yasunobu Sumida

Title: Yasunobu Sumida: Innovator in Gallium Nitride Semiconductor Technology

Introduction

Yasunobu Sumida is a notable inventor based in Tochigi, Japan. He has made significant contributions to the field of semiconductor technology, particularly with his innovative work on gallium nitride (GaN) devices. His expertise and inventions have paved the way for advancements in low-loss semiconductor applications.

Latest Patents

Yasunobu Sumida holds a patent for a "Polarization super-junction low-loss gallium nitride semiconductor device." This invention provides a low-loss GaN-based semiconductor device that features a unique structure. The device includes an InGaN layer, an AlGaN layer, and a p-type InGaN layer, all sequentially stacked on a base substrate of a C-plane sapphire substrate. At non-operating times, the device forms a two-dimensional hole gas and a two-dimensional electron gas at the hetero-interfaces, enhancing its performance.

Career Highlights

Throughout his career, Yasunobu Sumida has worked with esteemed institutions, including the University of Sheffield and Powdec K.K. His work has been instrumental in advancing semiconductor technology, particularly in the development of efficient and effective devices.

Collaborations

Yasunobu has collaborated with notable professionals in his field, including Akira Nakajima and Sankara Narayanan Ekkanath Madathil. These collaborations have contributed to the success and impact of his inventions.

Conclusion

Yasunobu Sumida's contributions to gallium nitride semiconductor technology exemplify his innovative spirit and dedication to advancing the field. His patent and collaborations highlight his role as a significant inventor in the semiconductor industry.