The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Jun. 21, 2011
Akira Nakajima, Aichi, JP;
Sankara Narayanan Ekkanath Madathil, Leicestershire, GB;
Yasunobu Sumida, Tochigi, JP;
Hiroji Kawai, Tochigi, JP;
Akira Nakajima, Aichi, JP;
Sankara Narayanan Ekkanath Madathil, Leicestershire, GB;
Yasunobu Sumida, Tochigi, JP;
Hiroji Kawai, Tochigi, JP;
The University of Sheffield, Sheffield, GB;
Powdec K.K., Kanagawa, JP;
Abstract
A low-loss GaN-based semiconductor device is provided. The semiconductor device has the InGaN layer (where 0≦z<1), the AlGaN layer (where 0<x<1), the InGaN layer (where 0≦y<1) and the p-type InGaN layer (where 0≦w<1) which are sequentially stacked on a base substrate of a C-plane sapphire substrate, etc. At a non-operating time, the two-dimensional hole gas is formed in the InGaN layer in the vicinity part of a hetero-interface between the AlGaN layer and the InGaN layer, and the two-dimensional electron gas is formed in the InGaN layer in the vicinity part of a hetero-interface between the InGaN layer and the AlGaN layer.