Yasuhito Gotoh

Title: **Yasuhito Gotoh: Innovator in Ion Beam Technology**

Introduction

Yasuhito Gotoh is a notable inventor based in Otsu, Japan, recognized for his contributions to the field of ion beam technology. With two patents to his name, his innovations focus on enhancing the efficiency and effectiveness of ion beam applications, particularly in semiconductor device production.

Latest Patents

Yasuhito Gotoh's latest patents include an "Ion Beam Irradiation Device and Method for Suppressing Ion Beam Divergence." This invention seeks to improve the utilization of electrons while efficiently suppressing the spread of ion beams caused by space charge effects. It eliminates the need for special magnetic structures by cleverly utilizing the surrounding space of a magnet. The patent involves an ion source, a collimating magnet, and multiple electron sources strategically placed in a magnetic field gradient region to optimize electron direction towards the ion beam.

Additionally, he holds a patent for an "Ion Beam Irradiating Apparatus and Method of Producing Semiconductor Device." This apparatus features a field emission electron source positioned near the ion beam's path, which emits electrons at a specific incident angle. This design is critical for improving the quality and precision of semiconductor devices.

Career Highlights

Throughout his career, Yasuhito Gotoh has made significant strides in the research and development sectors. He has worked for respected organizations, including Nissin Ion Equipment Co., Ltd., where he contributed to advancements in ion beam technology, and Kyoto University, which enabled him to collaborate with other researchers in the field.

Collaborations

Yasuhito Gotoh has collaborated with prominent figures such as Dan Nicolaescu and Shigeki Sakai, leveraging their expertise to enhance his inventions and further explore innovative solutions in ion beam applications.

Conclusion

Yasuhito Gotoh's work exemplifies the impact of innovative thinking in technology and research. His patents not only contribute to the field of ion beam technology but also play a vital role in advancing semiconductor manufacturing processes. As he continues to push the boundaries of innovation, his contributions are likely to influence future developments in the industry.