Hitachi, Japan

Yasuhiko Murata


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: Yasuhiko Murata: Innovator in Semiconductor Technology

Introduction

Yasuhiko Murata is a prominent inventor based in Hitachi, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods to enhance the performance and reliability of semiconductor devices. His innovative approach has led to the creation of a patented technology that addresses critical challenges in the industry.

Latest Patents

Yasuhiko Murata holds a patent for a semiconductor device and its production method. This invention focuses on preventing film separation of the bottom electrode during heat treatment processes. The technique involves forming a glue layer, which includes an insulator, between the SiO insulation layer and the inner wall of a concave hole. This method ensures that the bottom electrode, made of Ru, is closely packed and effectively supports the dielectric film comprising BST and the top electrode.

Career Highlights

Throughout his career, Yasuhiko Murata has been associated with Hitachi, Ltd., a leading company in technology and innovation. His work has been instrumental in advancing semiconductor device manufacturing processes, contributing to the overall efficiency and effectiveness of electronic components.

Collaborations

Yasuhiko has collaborated with notable colleagues, including Toshihide Nabatame and Masaru Kadoshima. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the semiconductor field.

Conclusion

Yasuhiko Murata's contributions to semiconductor technology exemplify the spirit of innovation. His patented methods not only enhance device performance but also pave the way for future advancements in the industry. His work continues to influence the development of reliable and efficient semiconductor devices.

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