Hitachi, Ltd.

Yasuhiko Murata

Takaaki Suzuki

Toshihide Nabatame

Mitsuo Hayashibara

Masaru Kadoshima

Tetsuo Fujiwara

Seiji Watahiki

In a semiconductor device and production method thereof, a technique is used to prevent film separation of the bottom electrode occurring during a heat treatment process which is carried out to make the bottom electrode closely packed and in the heat treatment process for producing dielectric crystallization. In the production method, a glue layer including an insulator is formed between SiO insulation layer and the inner wall of a concave hole. The SiO layer is located on the Si board , and Si plug and a barrier layer are formed therein. A glue layer is formed on the inner wall of the hole of the SiO insulation layer , and a bottom electrode comprising Ru is formed on the barrier layer and glue layer . Dielectric film comprising BST and a top electrode comprising Ru are laminated sequentially on the bottom electrode , to form a dielectric device with the bottom electrode

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Hitachi, Japan

Yasuhiko Murata