The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
Aug. 23, 2000
Toshihide Nabatame, Hitachi, JP;
Masaru Kadoshima, Hitachi, JP;
Takaaki Suzuki, Hitachinaka, JP;
Tetsuo Fujiwara, Hitachinaka, JP;
Seiji Watahiki, Hitachinaka, JP;
Yasuhiko Murata, Hitachi, JP;
Mitsuo Hayashibara, Hitachinaka, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In a semiconductor device and production method thereof, a technique is used to prevent film separation of the bottom electrode occurring during a heat treatment process which is carried out to make the bottom electrode closely packed and in the heat treatment process for producing dielectric crystallization. In the production method, a glue layer including an insulator is formed between SiO insulation layer and the inner wall of a concave hole. The SiO layer is located on the Si board , and Si plug and a barrier layer are formed therein. A glue layer is formed on the inner wall of the hole of the SiO insulation layer , and a bottom electrode comprising Ru is formed on the barrier layer and glue layer . Dielectric film comprising BST and a top electrode comprising Ru are laminated sequentially on the bottom electrode , to form a dielectric device with the bottom electrode