Taoyuan Hsien, Taiwan

Yao-Hsiung Kung


Average Co-Inventor Count = 1.8

ph-index = 2

Forward Citations = 10(Granted Patents)


Location History:

  • Hsien, TW (2005)
  • Tao Yuan Hsien, TW (2005 - 2007)
  • Taoyuan, TW (2004 - 2024)

Company Filing History:


Years Active: 2004-2024

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6 patents (USPTO):Explore Patents

Title: Yao-Hsiung Kung: Innovator in Semiconductor Technology

Introduction

Yao-Hsiung Kung is a prominent inventor based in Taoyuan Hsien, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of six patents. His work focuses on innovative semiconductor structures that enhance performance and efficiency.

Latest Patents

Among his latest patents is a semiconductor structure having an air gap. This patent provides a detailed description of a semiconductor structure that includes a first bit line on a substrate, a contact adjacent to the first bit line, and a dielectric layer. The structure is designed to improve the functionality of semiconductor devices. Another notable patent is a method of manufacturing a semiconductor structure having an air gap. This method outlines the steps for creating a semiconductor structure that includes forming a bit line, dielectric layers, and a contact, ultimately resulting in an air gap that enhances device performance.

Career Highlights

Yao-Hsiung Kung is currently employed at Nan Ya Technology Corporation, where he continues to innovate in semiconductor technology. His expertise and contributions have positioned him as a key figure in the industry, driving advancements that benefit various applications.

Collaborations

He has collaborated with notable coworkers, including Chih-Kun Chen and Chung-Min Lin, to further enhance the development of semiconductor technologies.

Conclusion

Yao-Hsiung Kung's work in semiconductor technology exemplifies innovation and dedication. His patents and contributions continue to shape the future of the industry, making him a significant figure in the field.

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