The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2024

Filed:

Jan. 12, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Yao-Hsiung Kung, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H10B 12/482 (2023.02);
Abstract

The present disclosure provides a semiconductor structure and a method of manufacturing the semiconductor structure. The semiconductor structure includes a first bit line on a substrate; a contact adjacent to the first bit line on the substrate, wherein a first distance between a top portion of the contact and the first bit line is less than a second distance between a lower portion of the contact and the first bit line; a dielectric layer, disposed conformally over the first bit line, the substrate, and the contact; and a first air gap, sealed by the dielectric layer and defined by the first bit line, the substrate and the contact.


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