Pampigny, Switzerland

Yann Caloz


 

Average Co-Inventor Count = 11.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2020

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2 patents (USPTO):Explore Patents

Title: Innovations by Yann Caloz

Introduction

Yann Caloz is a notable inventor based in Pampigny, Switzerland. He has made significant contributions to the field of stone setting through his innovative methods. With a total of 2 patents, his work showcases a blend of creativity and technical expertise.

Latest Patents

Caloz's latest patents include a "Method for Crimping a Stone" and a "Method for Setting a Stone." The first patent describes a method for assembling a stone onto a setting support. This involves cutting the stone to exhibit specific features and creating a substrate with a recess for the stone. The process includes electroplating a metal layer in the peripheral free space around the girdle, effectively confining the girdle within the metal layer to form the setting support. The second patent outlines a method for assembling a stone onto a mounting by sinking the stone into an adhesive layer and positioning a setting sheet around it. This method also involves depositing a metallic layer in the peripheral free space to create a secure mounting.

Career Highlights

Yann Caloz is currently employed at The Swatch Group Research and Development Ltd. His work at this esteemed company has allowed him to explore and develop innovative techniques in the jewelry industry. His patents reflect his commitment to enhancing the methods of stone setting.

Collaborations

Caloz has collaborated with talented individuals such as Stewes Bourban and Pascal Grossenbacher. Their combined expertise has contributed to the advancement of innovative solutions in their field.

Conclusion

Yann Caloz's contributions to the field of stone setting through his innovative patents demonstrate his expertise and creativity. His work continues to influence the industry and showcases the importance of innovation in craftsmanship.

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