Yang-Shun Fan

Title: Innovations of Yang-Shun Fan

Introduction

Yang-Shun Fan is a notable inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of memory structures, holding a total of 4 patents. His work focuses on advanced memory technologies that are essential for modern electronic devices.

Latest Patents

One of Yang-Shun Fan's latest patents is titled "Memory structure and preparation method thereof." This innovative memory structure includes a control unit and a memory unit that are electrically connected. The control unit consists of a source and a drain, with an active layer in contact with portions of both. Additionally, it features a gate layer and a gate insulation layer positioned between the active layer and the gate layer. The memory unit comprises a bottom electrode layer, a top electrode layer, and a resistive switching layer situated between the two electrode layers. Notably, both the resistive switching layer and the active layer are made from aluminum zinc tin oxide (AZTO).

Career Highlights

Yang-Shun Fan is affiliated with National Yang Ming Chiao Tung University, where he continues to advance his research in memory technologies. His academic background and ongoing projects contribute to the university's reputation as a leading research institution in Taiwan.

Collaborations

Yang-Shun Fan collaborates with esteemed colleagues such as Po-Tsun Liu and Chun-Ching Chen. Their combined expertise enhances the innovative potential of their research projects.

Conclusion

Yang-Shun Fan's contributions to memory structure technology exemplify the importance of innovation in the electronics field. His patents reflect a commitment to advancing memory solutions that are crucial for future technological developments.