The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

Nov. 13, 2015
Applicant:

National Chiao Tung University, Hsinchu, TW;

Inventors:

Po-Tsun Liu, Hsinchu, TW;

Yang-Shun Fan, Hsinchu County, TW;

Chun-Ching Chen, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1625 (2013.01); H01L 45/145 (2013.01);
Abstract

A memory structure includes a control unit and a memory unit electrically connected to the control unit. The control unit includes a source and a drain; an active layer in contact with a portion of the source and a portion of the drain; a gate layer; and a gate insulation layer disposed between the active layer and the gate layer. The memory unit includes a bottom electrode layer; a top electrode layer; and a resistive switching layer interposed between the bottom electrode layer and the top electrode layer, which the resistive switching layer and the active layer are formed of aluminum zinc tin oxide (AZTO).


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