Chun-Ching Chen

Title: Innovations of Chun-Ching Chen

Introduction

Chun-Ching Chen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory structures, holding a total of 2 patents. His work focuses on advanced memory technologies that are essential for modern computing.

Latest Patents

Chun-Ching Chen's latest patents include a memory structure and preparation method. This innovative memory structure consists of a control unit and a memory unit that are electrically connected. The control unit features a source and a drain, along with an active layer that contacts both the source and the drain. Additionally, it includes a gate layer and a gate insulation layer positioned between the active layer and the gate layer. The memory unit is composed of a bottom electrode layer, a top electrode layer, and a resistive switching layer situated between the two electrode layers. Notably, both the resistive switching layer and the active layer are made from aluminum zinc tin oxide (AZTO).

Career Highlights

Chun-Ching Chen is affiliated with National Yang Ming Chiao Tung University, where he continues to advance his research in memory technologies. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Chun-Ching Chen collaborates with esteemed colleagues such as Po-Tsun Liu and Yang-Shun Fan. Their combined expertise contributes to the innovative research being conducted at their institution.

Conclusion

Chun-Ching Chen's contributions to memory structure technology highlight his role as a leading inventor in the field. His patents reflect a commitment to advancing electronic memory solutions, which are crucial for the future of technology.