National Yang Ming Chiao Tung University

Chun-Ching Chen

Po-Tsun Liu

Yang-Shun Fan

A memory structure includes a control unit and a memory unit electrically connected to the control unit. The control unit includes a source and a drain; an active layer in contact with a portion of the source and a portion of the drain; a gate layer; and a gate insulation layer disposed between the active layer and the gate layer. The memory unit includes a bottom electrode layer; a top electrode layer; and a resistive switching layer interposed between the bottom electrode layer and the top electrode layer, which the resistive switching layer and the active layer are formed of aluminum zinc tin oxide (AZTO).

Growing community of inventors

Hsinchu, Taiwan

Chun-Ching Chen