Company Filing History:
Years Active: 2015-2017
Title: Yang-Lo Ahn: Innovator in Nonvolatile Memory Technology
Introduction
Yang-Lo Ahn is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of nonvolatile memory technology, holding a total of six patents. His work focuses on improving memory systems and their operational methods, which are crucial for the advancement of electronic devices.
Latest Patents
Among his latest patents is a memory system and driving method that utilizes at least two zone voltages. This innovative driving method for nonvolatile memory devices involves receiving a program command and an address. The method includes adjusting the number of adjacent zones of multiple zones formed by unselected word lines based on the location of a selected word line corresponding to the received address. Additionally, it applies different zone voltages to the adjacent zones and remaining zones. Another notable patent involves nonvolatile memory devices and program verification methods that use a single verification voltage to verify memory cells with varying target states. This program verification method is designed for nonvolatile memory devices that program multiple memory cells, applying various verification voltages to determine if the programming is complete.
Career Highlights
Yang-Lo Ahn is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of memory technology, contributing to the development of advanced electronic products.
Collaborations
He has collaborated with notable colleagues, including Kitae Park and Sang-Wan Nam, who share his passion for innovation in memory technology.
Conclusion
Yang-Lo Ahn's contributions to nonvolatile memory technology have positioned him as a key figure in the field. His innovative patents and work at Samsung Electronics Co., Ltd. continue to influence the future of electronic devices.