The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Dec. 12, 2013
Applicants:
Yang-lo Ahn, Seoul, KR;
Sang-wan Nam, Hwaseong-si, KR;
Sang-won Shim, Seoul, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3427 (2013.01); G11C 16/3422 (2013.01);
Abstract
A vertical nonvolatile memory device which includes a plurality of cell strings formed in a direction intersecting with a substrate is provided. The vertical nonvolatile memory device is configured to apply a non-selection read voltage to at least one selection line connected to a cell string from among the plurality of cell strings. The vertical nonvolatile memory device is configured to apply the non-selection read voltage to at least one unselected word line of the cell string a desired time period after the applying of the non-selection read voltage to the at least one selection line.