The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2015

Filed:

Apr. 04, 2014
Applicants:

Minsu Kim, Hwaseong-Si, KR;

Yang-lo Ahn, Seoul, KR;

Dae Han Kim, Seoul, KR;

Kitae Park, Seongnam-Si, KR;

Inventors:

Minsu Kim, Hwaseong-Si, KR;

Yang-Lo Ahn, Seoul, KR;

Dae Han Kim, Seoul, KR;

Kitae Park, Seongnam-Si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 16/0483 (2013.01); G11C 16/3427 (2013.01);
Abstract

A nonvolatile memory device includes a plurality of vertical NAND flash memory cells arranged in a three dimensional (3D) structure, a first memory block disposed in the 3D structure and having memory cells selected by a first ground selection line and a second ground selection line, wherein the first and second ground selection lines are electrically separated from each other, a second memory block disposed in the 3D structure and having memory cells selected by a third selection line and fourth selection line, wherein the third and fourth ground selection lines are electrically separated from each other, and a pass transistor that transfers a driving signal to turn on ground selection transistors respectively connected to the first and third ground selection lines in response to a block selection signal.


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