Yang-Hsin Shih

Title: Yang-Hsin Shih and Semiconductor Innovation

Introduction

Yang-Hsin Shih is an inventor based in Hsinchu City, Taiwan. His patent work concerns semiconductor structures and through-substrate vias, technologies used in advanced chip design and manufacturing. He is associated with Taiwan Semiconductor Manufacturing Company Limited.

Latest Patents

Shih is named on one patent, titled “Through-substrate-via cell.” The disclosed semiconductor structure includes a substrate, a through-substrate-via (TSV) cell positioned over the substrate, and a TSV extending through both the cell and the substrate.

The TSV cell has a guard ring around its perimeter and an enclosed buffer zone containing two types of dummy transistors. The transistors use epitaxial features, nanostructures, and isolation gate structures. This arrangement describes a cell architecture designed around a TSV within a semiconductor substrate. Shih’s listed patent portfolio comprises 1 patent.

Career Highlights

Shih’s identified patent reflects work in semiconductor device structures, particularly the integration of TSVs with surrounding cell features. His association with Taiwan Semiconductor Manufacturing Company Limited connects this work to a major semiconductor manufacturing organization.

Collaborations

Yun-Sheng Li and Chih Hsin Yang are listed as Shih’s coworkers. Their names provide context for his professional network, though the supplied information does not specify their roles in the patent.

Conclusion

Yang-Hsin Shih’s patent activity centers on a TSV cell structure that combines a through-substrate via, a guard ring, and a buffer zone with dummy transistors. This work highlights his contribution to semiconductor innovation in Hsinchu City, Taiwan.