Incheon, South Korea

Yang-hee Lee

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yang-hee Lee. Retrieved from https://idiyas.com/inventor/yang-hee-lee-mfpwf5pf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Yang-hee Lee: Innovator in Semiconductor Technology

Introduction: Yang-hee Lee is a prominent inventor based in Incheon, South Korea. She is known for her contributions to the field of semiconductor technology. With a focus on innovative designs and manufacturing methods, her work has significant implications for the electronics industry.

Latest Patents: Yang-hee Lee holds 1 patent for a semiconductor device and method of manufacturing the same. This patent describes a semiconductor device that includes a direct contact and a bit line in a cell array region, along with a gate electrode structure in a peripheral circuit region. The invention aims to enhance the efficiency and performance of semiconductor devices.

Career Highlights: Yang-hee Lee is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. Her role involves research and development in semiconductor technologies, where she applies her expertise to create advanced electronic components.

Collaborations: Throughout her career, Yang-hee Lee has collaborated with notable colleagues, including Young-ho Koh and Byoung-ho Kwon. These partnerships have fostered innovation and contributed to the success of various projects within the semiconductor field.

Conclusion: Yang-hee Lee's work in semiconductor technology exemplifies the importance of innovation in the electronics industry. Her contributions continue to shape the future of semiconductor devices and manufacturing methods.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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