The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Jun. 17, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Young-ho Koh, Seongnam-si, KR;
Byoung-ho Kwon, Hwaseong-si, KR;
Yang-hee Lee, Incheon, KR;
Young-kuk Kim, Seoul, KR;
In-seak Hwang, Suwon-si, KR;
Bo-un Yoon, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device including a direct contact and a bit line in a cell array region and a gate electrode structure in a peripheral circuit region, and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a substrate including a cell array region including a first active region and a peripheral circuit region including a second active region, a first insulating layer on the substrate, the first insulating layer including contact holes exposing the first active region, a direct contact in the contact holes, wherein a direct contact is connected to the first active region, a bit line connected to the direct contact in the cell array region and extending in a first direction, and a gate insulating layer and a gate electrode structure, wherein a dummy conductive layer including substantially the same material as the direct contact is in the peripheral circuit region.