Durham, NC, United States of America

Yan Gao

This inventor holds 9 USPTO granted patents and 1 published patent application and 3 EPO patents. Top assignees: University of California, Japan Science and Technology Agency, Syngenta Participations Ag. Active years: 2010-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yan Gao. Retrieved from https://idiyas.com/inventor/yan-gao-ivjqo0u5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 9 

% Patents Active = 88.9

 

Average Co-Inventor Count = 3.5

ph-index = 2

Forward Citations = 151(Granted Patents)


Location History:

  • Goleta, CA (US) (2010)
  • Research Triangle Park, NC (US) (2016 - 2021)
  • Durham, NC (US) (2014 - 2023)

Company Filing History:


Years Active: 2010-2023

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9 patents (USPTO):Explore Patents

Title: **Innovative Contributions of Yan Gao in Gallium Nitride Technology**

Introduction

Yan Gao, an esteemed inventor based in Durham, NC, has made significant contributions to the field of photonics through his pioneering work in gallium nitride (GaN) technology. With a total of five patents to his name, Gao’s innovations are enhancing the efficiency of light-emitting diodes, which are pivotal in various lighting and display applications.

Latest Patents

Among his notable patents, Gao's work on "Highly efficient gallium nitride based light emitting diodes via surface roughening" stands out. This invention details a novel approach where light is extracted through the nitrogen face (N-face) of the LED. The surface of the N-face is intricately roughened into one or more hexagonal-shaped cones. This innovative surface design significantly reduces light reflections that occur within the LED, thereby allowing more light to be extracted, resulting in enhanced overall efficiency. The roughening is achieved through anisotropic etching processes, utilizing either dry etching or photo-enhanced chemical etching techniques.

Career Highlights

Gao has had a distinguished career, contributing his expertise at reputable institutions, including the University of California and the Japan Science and Technology Agency. His work at these organizations has allowed him to push the boundaries of semiconductor technology and light emission efficiency.

Collaborations

Throughout his career, Yan Gao has collaborated with notable colleagues in the field, including Tetsuo Fujii and Evelyn Lynn Hu. These collaborations have furthered the development of innovative technologies and have contributed to successful research outcomes in photonics and materials science.

Conclusion

Yan Gao's contributions to gallium nitride technology through his patents illustrate his pivotal role in the advancement of LED efficiency. His innovative approaches and collaborations with prominent researchers underline the importance of teamwork and creativity in the field of technology. As the demand for efficient lighting solutions continues to grow, Gao’s inventions will undoubtedly play a crucial role in shaping the future of illumination and display technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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