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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10985293 B1

PDFFull Text
Expired
Date of Patent:
Apr. 20, 2021

Filed:

Sep. 05, 2019

Highly efficient gallium nitride based light emitting diodes via surface roughening

Applicants:

The Regents of the University of California, Oakland, CA (US);

Japan Science and Technology Agency, Saitama Prefecture, JP;

Inventors:

Tetsuo Fujii, Goleta, CA (US);

Yan Gao, Durham, NC (US);

Evelyn L. Hu, Cambridge, MA (US);

Shuji Nakamura, Santa Barbara, CA (US);

Assignees:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);

JAPAN SCIENCE AND TECHNOLOGY AGENCY, Saitama Prefecture, JP;

Attorney:

Gates & Cooper LLP

Primary Examiner:

Mounir S Amer

Int. Cl.
CPC ...
H01L 33/22 (2010.01); H01L 33/60 (2010.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/50 (2010.01); H01L 33/54 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); H01L 33/007 (2013.01); H01L 33/0093 (2020.05); H01L 33/32 (2013.01); H01L 33/60 (2013.01); H01L 33/00 (2013.01); H01L 33/06 (2013.01); H01L 33/50 (2013.01); H01L 33/54 (2013.01); H01L 2224/16225 (2013.01);
Abstract

A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

Find Patent Forward Citations

Fujii, Tetsuo. (2021). Highly efficient gallium nitride based light emitting diodes via surface roughening (U.S. Patent No. 10985293). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10985293

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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