Company Filing History:
Years Active: 2020-2021
Title: Innovations of Yan Fu in DDR Memory Technology
Introduction
Yan Fu is an accomplished inventor based in Portland, OR (US). She has made significant contributions to the field of memory technology, particularly in DDR (Double Data Rate) memory buses. With a total of 2 patents to her name, her work has had a notable impact on the efficiency and performance of data transmission in computing systems.
Latest Patents
Yan Fu's latest patents focus on enhancing DDR memory bus functionality. One of her notable inventions is a method that includes configuring a first register space to establish ODT (On-Die Termination) values of a data strobe signal trace of a DDR data bus. Additionally, it involves configuring a second register space to establish ODT values of a data signal trace of the DDR data bus. Importantly, the ODT values for the data strobe signal trace differ from those of the data signal trace. Furthermore, the ODT values for the data strobe signal remain unchanged when consecutive write operations of the DDR bus target different ranks of the same DIMM (Dual In-line Memory Module).
Career Highlights
Yan Fu is currently employed at Intel Corporation, a leading technology company known for its innovations in semiconductor manufacturing and computing solutions. Her work at Intel has allowed her to collaborate with some of the brightest minds in the industry, contributing to advancements in memory technology.
Collaborations
Some of her notable coworkers include James A McCall and Christopher P Mozak. Their collaboration has fostered an environment of innovation and creativity, leading to the development of cutting-edge technologies in the field.
Conclusion
Yan Fu's contributions to DDR memory technology exemplify her dedication to innovation and excellence in the field. Her patents reflect a deep understanding of memory systems and their optimization, making her a valuable asset to Intel Corporation and the technology industry as a whole.