Yamato Miki

Title: Yamato Miki: Innovator in Semiconductor Technology

Introduction

Yamato Miki is a prominent inventor based in Fukuoka, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of high-voltage insulated gate type bipolar semiconductor devices. His innovative approach has led to advancements that are crucial for modern electronic applications.

Latest Patents

Yamato Miki holds a patent for a "Method for fabricating high-voltage insulated gate type bipolar semiconductor device." This method involves comparing a reference structure to determine the width of a mesa region and trench depth, based on a scaling ratio. The scaling ratio is defined as K=Y/X, where X is the size of a target portion to be miniaturized in the device, and Y is the size of a target portion in the reference structure. This patent showcases his expertise in enhancing the efficiency and performance of semiconductor devices.

Career Highlights

Miki is affiliated with the Kyushu Institute of Technology, where he continues to engage in research and development. His work has been instrumental in pushing the boundaries of semiconductor technology, making him a valuable asset in the field.

Collaborations

Yamato Miki has collaborated with notable colleagues such as Ichiro Omura and Masahiro Tanaka. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Yamato Miki's contributions to semiconductor technology through his patent and collaborative efforts highlight his role as an influential inventor. His work continues to impact the industry positively, paving the way for future advancements in technology.