Bat Yam, Israel

Yaakov Ben-Bassat

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Intel Corporation. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yaakov Ben-Bassat. Retrieved from https://idiyas.com/inventor/yaakov-ben-bassat

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Innovations of Yaakov Ben-Bassat

Introduction

Yaakov Ben-Bassat is a notable inventor based in Bat Yam, Israel. He has made significant contributions to the field of technology, particularly in noise power estimation. His work has implications for the performance of various devices, enhancing their efficiency and reliability.

Latest Patents

Yaakov holds a patent for a "Method for noise power estimation." This patent describes technologies related to the implementation of noise power estimation in a receiver of a device. His innovative approach addresses challenges in accurately measuring noise power, which is crucial for improving device performance.

Career Highlights

Yaakov Ben-Bassat is currently employed at Intel Corporation, a leading technology company known for its advancements in semiconductor manufacturing and computing technologies. His role at Intel allows him to work on cutting-edge projects that push the boundaries of technology.

Collaborations

Throughout his career, Yaakov has collaborated with talented individuals such as Vladimir Kravtsov and Michael Genossar. These collaborations have fostered an environment of innovation and creativity, leading to the development of impactful technologies.

Conclusion

Yaakov Ben-Bassat's contributions to noise power estimation exemplify the importance of innovation in technology. His work at Intel Corporation and his collaborations with other experts highlight his commitment to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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