Kaohsiung, Taiwan

Ya-Min Chang

USPTO Granted Patents = 5 

Average Co-Inventor Count = 1.3

ph-index = 1


Location History:

  • Kaohsiung, TW (2017 - 2022)
  • Hsinchu, TW (2023)

Company Filing History:


Years Active: 2017-2023

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5 patents (USPTO):Explore Patents

Title: The Innovations of Ya-Min Chang

Introduction

Ya-Min Chang is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of memory technology, holding a total of 5 patents. His work focuses on enhancing the performance and efficiency of memory systems.

Latest Patents

One of his latest patents is titled "Control module and control method thereof for synchronous dynamic random access memory." This invention provides a control module and a control method for SDRAM, which includes at least one register and a controller. The controller is designed to manage the SDRAM's transition from a bus data access mode to a dynamic pin (DPIN) operating mode, setting the value of the register under this mode, and controlling the SDRAM based on the register's value. Another notable patent is for a "Memory system having memories of different capacities." This system comprises a memory controller, a first memory, and a second memory, where the second memory has a greater capacity than the first. The memory controller is capable of controlling both memories simultaneously through its command address and chip select ports.

Career Highlights

Ya-Min Chang is currently employed at Realtek Semiconductor Inc., a leading company in the semiconductor industry. His work at Realtek has allowed him to develop innovative solutions that address the challenges in memory technology.

Collaborations

Some of his notable coworkers include Hsing-Chen Lu and Chi-Shao Lai, who contribute to the collaborative environment at Realtek Semiconductor Inc.

Conclusion

Ya-Min Chang's contributions to memory technology through his patents and work at Realtek Semiconductor Inc. highlight his role as an influential inventor in the field. His innovations continue to shape the future of memory systems.

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