Tainan, Taiwan

Ya-Hsin Huang

This inventor holds 2 USPTO granted patents. Top assignee: United Microelectronics Corp.. Active years: 2021-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ya-Hsin Huang. Retrieved from https://idiyas.com/inventor/ya-hsin-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021-2023

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2 patents (USPTO):Explore Patents

Title: Innovations of Ya-Hsin Huang

Ya-Hsin Huang is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in high voltage devices. With a total of 2 patents to his name, Huang's work is recognized for its innovative approaches and practical applications.

Latest Patents

Ya-Hsin Huang's latest patents include a high voltage semiconductor device and a manufacturing method for the same. The first patent describes a high voltage semiconductor device that consists of a semiconductor substrate, a gate structure, a drift region, a drain region, and an isolation structure. The gate structure is positioned on the semiconductor substrate, while the drift region is partially located at the side of the gate structure. The drain region is situated within the drift region, and the isolation structure is at least partially integrated into the drift region. Notably, a part of the isolation structure is placed between the drain region and the gate structure, featuring a curved bottom surface.

The second patent also focuses on a high voltage semiconductor device, detailing similar components as the first. However, it emphasizes that the top of the isolation structure has a flat surface, while the bottom features a curved surface. This innovative design enhances the performance and reliability of high voltage semiconductor devices.

Career Highlights

Ya-Hsin Huang is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to further develop his expertise and contribute to cutting-edge technologies in semiconductor manufacturing.

Collaborations

Some of his coworkers include Po-Chun Lai and Chen-An Kuo, who have collaborated with him on various projects. Their teamwork has fostered an environment of innovation and creativity within their field.

Conclusion

In summary, Ya-Hsin Huang is a distinguished inventor whose contributions to high voltage semiconductor devices have made a significant impact in the industry. His innovative patents and collaborative efforts continue to advance semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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