Ya-Han Liang

Title: Innovations of Ya-Han Liang in Semiconductor Technology.

Introduction

Ya-Han Liang is a prominent inventor based in Taoyuan, Taiwan. She has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. Her work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Ya-Han Liang's latest patents include a semiconductor structure having a high voltage well region. This innovative method for fabricating a semiconductor structure involves providing a substrate and implanting it to form a high-voltage well region with a first conductivity type. The process also includes forming a pair of drain drift regions in the high-voltage well region, which have a second conductivity type opposite to the first. Additionally, she has developed a high voltage semiconductor device and method for fabricating the same. This device features a semiconductor substrate with a first conductivity type and a gate structure disposed over a portion of the substrate, along with a pair of spacers and a first drift region.

Career Highlights

Ya-Han Liang is currently employed at Vanguard International Semiconductor Corporation, where she continues to innovate in semiconductor technology. Her work has been instrumental in advancing the capabilities of high voltage semiconductor devices.

Collaborations

Throughout her career, Ya-Han Liang has collaborated with notable colleagues, including Chih-Cherng Liao and Chung-Te Chou. These collaborations have further enriched her contributions to the field.

Conclusion

Ya-Han Liang's innovative work in semiconductor technology exemplifies her dedication to advancing the industry. Her patents reflect her expertise and commitment to developing efficient semiconductor solutions.