Tianjin, China

Ya Ding

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Tianjin) Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ya Ding. Retrieved from https://idiyas.com/inventor/ya-ding

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Ya Ding: Semiconductor Structure Innovation

Introduction

Ya Ding is an inventor associated with semiconductor technology in Tianjin, China. Her work includes a patent for a semiconductor structure and its fabrication method.

Latest Patents

Ding is listed as an inventor on 1 patent, titled “Semiconductor Structure and Fabrication Method Thereof.” The invention describes a substrate with first and second electrode plates, along with a sidewall structure attached to the second electrode plate. The sidewall’s dielectric constant decreases in the direction away from that electrode, a design feature intended to shape the structure’s electrical properties.

Career Highlights

Ding’s listed company affiliations include Semiconductor Manufacturing International (Shanghai) Corporation and Semiconductor Manufacturing International (Tianjin) Corporation. These affiliations place her work within the semiconductor manufacturing sector.

Collaborations

Ding’s listed coworkers include Yanhong Zhang and Jinsong Wang, reflecting professional connections in semiconductor research and development.

Conclusion

Ya Ding’s patent documents her contribution to semiconductor structure design, including an electrode arrangement and a sidewall with a graded dielectric constant.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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