The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

May. 25, 2023
Applicants:

Semiconductor Manufacturing International (Tianjin) Corporation, Tianjin, CN;

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventors:

Ya Ding, Tianjin, CN;

Jinsong Wang, Tianjin, CN;

Linhong Yang, Tianjin, CN;

Yanhong Zhang, Tianjin, CN;

Yichen Du, Tianjin, CN;

Qiuying Chen, Tianjin, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H10D 1/68 (2025.01); H10W 20/00 (2026.01); H10W 20/40 (2026.01); H10W 20/47 (2026.01);
U.S. Cl.
CPC ...
H10W 20/47 (2026.01); H10D 1/692 (2025.01); H10W 20/075 (2026.01); H10W 20/077 (2026.01); H10W 20/496 (2026.01);
Abstract

A semiconductor structure includes a substrate, a first electrode plate over the substrate, a second electrode plate over the first electrode plate, and a sidewall structure. The sidewall structure is attached to a side of the second electrode plate. A dielectric constant of the sidewall structure decreases in a direction away from the second electrode plate.


Find Patent Forward Citations

Ding, Ya. (2026). Semiconductor structure and fabrication method thereof (U.S. Patent No. 12635512). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12635512

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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