Campbell, CA, United States of America

Y Long He

This inventor holds 1 USPTO granted patent. Top assignee: Intel Corporation. Active years: 2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Y Long He. Retrieved from https://idiyas.com/inventor/y-long-he

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Y Long He: Innovator in Plasma Etching Technology

Introduction

Y Long He is a notable inventor based in Campbell, California. He has made significant contributions to the field of plasma etching technology, which is crucial in semiconductor manufacturing. His innovative approach has led to advancements that enhance the efficiency and uniformity of etching processes.

Latest Patents

Y Long He holds a patent for "Plasma etching uniformity control." This invention utilizes two etchant gases to form a plasma, allowing for a controlled and uniform etch rate across a wafer. The method involves a positive plasma, which is the dominant plasma, and a negative plasma, which serves as the secondary plasma. By adjusting the ratio of these plasmas, ion densities can be made uniform across the wafer, resulting in a consistent etch rate.

Career Highlights

Y Long He is currently employed at Intel Corporation, where he continues to work on innovative technologies that push the boundaries of semiconductor manufacturing. His expertise in plasma etching has positioned him as a valuable asset to the company.

Collaborations

He has collaborated with notable colleagues, including Tsukasa Abe and Han-Ming Wu, who share a commitment to advancing technology in their respective fields.

Conclusion

Y Long He is a distinguished inventor whose work in plasma etching technology has made a significant impact on the semiconductor industry. His innovative patent demonstrates his dedication to improving manufacturing processes, and his collaborations further highlight his role in advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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