Folsom, CA, United States of America

Xuming Zhao

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Xuming Zhao - Innovator in Memory Architecture

Introduction

Xuming Zhao is a notable inventor based in Folsom, CA, who has made significant contributions to the field of memory architecture. He is currently associated with Intel Corporation, where he focuses on innovative solutions for memory devices. His work has led to the development of a unique patent that enhances memory performance.

Latest Patents

Xuming Zhao holds a patent titled "Apparatus, method and system to implement a dual VDM scheme on a three-dimensional memory architecture." This invention describes an apparatus that is coupled to a memory array of a memory device. The apparatus controls the execution of a set pre-read operation on first memory cells by applying a first demarcation voltage VDM0 during a designated time period. Additionally, it manages a reset pre-read operation on second memory cells by applying a second demarcation voltage VDM3, ensuring that the set and reset pre-read time periods do not overlap. This innovative approach allows for improved efficiency in memory operations.

Career Highlights

Throughout his career, Xuming Zhao has demonstrated a commitment to advancing memory technology. His work at Intel Corporation has positioned him as a key player in the development of cutting-edge memory solutions. With a focus on practical applications, Zhao's inventions aim to enhance the performance and reliability of memory devices.

Collaborations

Xuming Zhao collaborates with talented professionals in his field, including Yasir Mohsin Husain. Their combined expertise contributes to the innovative projects at Intel Corporation, fostering an environment of creativity and technological advancement.

Conclusion

Xuming Zhao's contributions to memory architecture through his patent and work at Intel Corporation highlight his role as an influential inventor in the technology sector. His innovative approaches continue to shape the future of memory devices, making significant strides in performance and efficiency.

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