This inventor holds 1 USPTO granted patent and 1 published patent application. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Years Active: 2026
Title: Xuelian Yu and Semiconductor Innovation
Introduction
Xuelian Yu is an inventor associated with Wuhan, China. Her patent work addresses semiconductor device design and fabrication, with a focus on adapting gate-spacer thicknesses for different device types.
Latest Patents
The provided information lists one patent for Yu: Semiconductor Apparatus, Fabrication Method Thereof and Memory System. The disclosure describes using two dielectric deposition operations to form gate spacers of different thicknesses in a semiconductor apparatus. This approach can provide a relatively thick spacer for a high-voltage device and a thinner spacer for a low-voltage device, including one less than 8 nanometers thick. The patent record provided identifies 1 patent.
Career Highlights
Yu’s listed patent highlights an approach to semiconductor fabrication that accommodates the differing requirements of high- and low-voltage devices within an apparatus. The described method aims to support both thicker and thinner gate spacers through separate dielectric deposition operations.
Collaborations
The provided information names Yanwei Shi and Hu Ding as Yu’s coworkers. Their specific roles in the patent or related work are not stated.
Conclusion
Xuelian Yu’s listed patent focuses on tailoring gate-spacer thicknesses through semiconductor fabrication techniques, reflecting an effort to meet the needs of different device types within a memory system.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile