Xuefei Chen

Title: Innovations by Xuefei Chen in CMOS Device Manufacturing

Introduction

Xuefei Chen is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of CMOS devices. His innovative approaches have led to advancements that enhance the efficiency and performance of these essential components in modern electronics.

Latest Patents

Xuefei Chen holds a patent for a method of manufacturing a CMOS device. This patent outlines a process that includes forming a gate structure and gate sidewalls of the CMOS device, where the material of the gate sidewalls is silicon nitride. The method further involves depositing a silicon nitride film directly on the gate structure and the gate sidewalls through atomic layer deposition (ALD). Additionally, a photolithography process is performed to define an ion implantation region. This innovative method is crucial for improving the fabrication process of CMOS devices.

Career Highlights

Xuefei Chen is currently employed at Shanghai Huali Integrated Circuit Corporation, where he continues to work on cutting-edge technologies in integrated circuits. His expertise in semiconductor manufacturing has positioned him as a valuable asset to the company and the industry at large.

Collaborations

Xuefei Chen collaborates with several professionals in his field, including his coworker Runling Li. Their combined efforts contribute to the advancement of semiconductor technologies and the development of innovative solutions.

Conclusion

Xuefei Chen's contributions to the field of CMOS device manufacturing exemplify the importance of innovation in technology. His patent and ongoing work at Shanghai Huali Integrated Circuit Corporation highlight his role as a key inventor in the semiconductor industry.