Changchun, China

Xuanjun Yan

This inventor holds 1 USPTO granted patent. Top assignee: Chinese Academy of Sciences. Active years: 2004.


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Xuanjun Yan: Innovator in Organic Semiconductor Technology

Introduction

Xuanjun Yan is a prominent inventor based in Changchun, China. He has made significant contributions to the field of organic semiconductors, particularly through his innovative patent. His work focuses on enhancing the functionality and efficiency of semiconductor devices.

Latest Patents

Xuanjun Yan holds a patent for a "Heterojunction organic semiconductor field effect transistor (FET) with a gate insulation layer and manufacturing process thereof." This invention describes an organic semiconductor field effect transistor that can operate in both depletion mode and super-inverse mode. The design includes a substrate, a gate electrode formed on the substrate, a gate insulation layer, a first semiconductor layer, and source and drain electrodes. Additionally, a second semiconductor layer is formed on the first semiconductor layer and the source/drain electrodes. This innovative design aims to improve the performance of organic semiconductor devices.

Career Highlights

Xuanjun Yan is affiliated with the Chinese Academy of Sciences, where he conducts research and development in semiconductor technology. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Xuanjun has collaborated with notable colleagues, including Haibo Wang and Donghang Yan, contributing to advancements in their shared field of research.

Conclusion

Xuanjun Yan's contributions to organic semiconductor technology highlight his role as an influential inventor. His innovative patent reflects his commitment to advancing the field and improving electronic device performance.

Profile summary based on public USPTO records.
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