The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
Jul. 09, 2003
Applicant:
Inventors:
Donghang Yan, Changchun, CN;
Jian Zhang, Changchun, CN;
Jun Wang, Changchun, CN;
Haibo Wang, Changchun, CN;
Xuanjun Yan, Changchun, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/524 ; H01L 5/140 ;
U.S. Cl.
CPC ...
H01L 3/524 ; H01L 5/140 ;
Abstract
A organic semiconductor field effect transistor that can work in the depletion mode or super-inverse mode, comprising: a substrate ( ), a gate electrode ( ) formed on the substrate ( ), a gate insulation layer ( ) formed on the substrate ( ) and the gate electrode ( ), a first semiconductor layer ( ) formed on the gate insulation layer ( ), a source electrode and a drain electrode ( ) formed on the first semiconductor layer ( ), and a second semiconductor layer ( ) formed on the first semiconductor layer ( ) and the source/drain electrodes ( ).