Xiuliang Cao

Title: Xiuliang Cao: Innovator in Semiconductor Technology

Introduction

Xiuliang Cao is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods of forming metal layers in semiconductor devices. His work has implications for improving the efficiency and quality of semiconductor manufacturing.

Latest Patents

Xiuliang Cao holds a patent for a method of forming a metal layer in a semiconductor device. The patent, titled "Method of forming metal layer, semiconductor device and method of fabricating same," describes a process that involves placing a substrate in a sputtering chamber. The method includes forming a first metal sub-layer on the substrate through a magnetron sputtering process, followed by the formation of a second metal sub-layer on the first. This process introduces a heated gas stream, resulting in a metal layer composed of aluminum doped with copper. The resulting metal layer features uniformly-sized small crystal grains, enhancing surface flatness and overall yield.

Career Highlights

Xiuliang Cao is associated with Shanghai Huahong Grace Semiconductor Manufacturing Corporation, where he applies his expertise in semiconductor manufacturing. His innovative approaches have contributed to advancements in the industry, particularly in the fabrication of high-quality semiconductor devices.

Collaborations

Xiuliang Cao has worked alongside notable colleagues, including Chong Liu and Jike Wu. Their collaborative efforts have furthered research and development in semiconductor technologies.

Conclusion

Xiuliang Cao's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work not only enhances manufacturing processes but also sets a standard for future innovations in the industry.