Xiquan Chen

Title: Xiquan Chen and Silica–MOF Composite Innovation.

Introduction

Xiquan Chen is an inventor associated with Zhangzhou, China, and Guangdong Longzee Interconnection Technology Co. Ltd. His patent work addresses materials for high-frequency flexible printed circuit boards.

Latest Patents

Chen is named on 1 patent: “Silica Hollow Sphere with a MOF Composite Layer and Method for Preparing the Same.” The invention describes a silica hollow sphere with an amino-silane layer covalently grafted to its surface, a ZIF-8 crystal layer grown in situ, and thiol groups distributed across the outer surface of the MOF crystals. The composite is designed to provide compatibility and stability in an LCP matrix while maintaining low dielectric loss, with the aim of improving high-frequency FPC performance.

Career Highlights

Chen’s listed invention combines surface modification of silica with metal-organic framework (MOF) materials. Its proposed structure brings together a hollow silica core, amino-silane functionalization, ZIF-8 crystals, and surface thiol groups.

Collaborations

Chen’s listed coworkers include Minyu Zeng and Feng Qin. His company affiliation is Guangdong Longzee Interconnection Technology Co. Ltd.

Conclusion

Xiquan Chen’s patent focuses on a functional silica–MOF composite intended to support stable, low-dielectric-loss materials for high-frequency flexible circuit applications.