The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2026
Filed:
Oct. 16, 2025
Dongguan Longzee Electronic Technology Co., Ltd., Dongguan, CN;
Guangdong Longzee Interconnection Technology Co. Ltd., Dongguan, CN;
Abstract
The present invention relates to the technical field of surface modification of silica, and more particularly to silica hollow sphere with a MOF composite layer and method for preparing the same. The silica hollow sphere comprises: a hollow spherical structure made of silica, an amino-silane layer covalently grafted onto the surface of the core layer, a ZIF-8 crystal layer grown in situ with amino groups serving as nucleation sites, and thiol groups distributed on the outer surface of the MOF crystals. The purpose of the present invention is to provide silica hollow sphere with a MOF composite layer and method for preparing the same. The silica hollow sphere with the composite layer exhibits good compatibility and stability in an LCP matrix, while maintaining low dielectric loss, thereby effectively improving the performance of high-frequency FPCs.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile