Shanghai, China

Xinzhi Dai

This inventor holds 1 USPTO granted patent. Top assignee: Omnivision Technologies (Shanghai) Co., Ltd.. Active years: 2025.


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Xinzhi Dai: Innovator in Image Sensor Technology

Introduction

Xinzhi Dai is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of image sensor technology. His innovative work has led to the development of a unique image sensor and a method for fabricating it.

Latest Patents

Xinzhi Dai holds 1 patent for his invention titled "Image sensor and method for fabricating the same." This patent describes an image sensor that includes a semiconductor substrate, photodiodes (PD), deep isolation trenches, first deep P-well blocks, and second deep P-wells. The design features isolation trenches that surround the PDs, ensuring that each trench is separated from adjacent ones at crossing points. The first deep P-well blocks have projections on the semiconductor substrate, which encompass the separated portions of the isolation trenches. Notably, the first P-well blocks can be formed using only one photomask, resulting in a reduction in manufacturing costs.

Career Highlights

Xinzhi Dai is currently employed at Omnivision Technologies (Shanghai) Co., Ltd. His work at this company has allowed him to focus on advancing image sensor technology. His contributions have been instrumental in enhancing the performance and efficiency of image sensors in various applications.

Collaborations

Some of his notable coworkers include Liqun Dong and Haibo Xiao. Their collaboration has fostered an environment of innovation and creativity within the team.

Conclusion

Xinzhi Dai's contributions to image sensor technology exemplify his dedication to innovation. His patent and work at Omnivision Technologies highlight his role as a key player in the advancement of this field.

Profile summary based on public USPTO records.
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