The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Aug. 26, 2022
Omnivision Technologies (Shanghai) Co., Ltd., Shanghai, CN;
Liqun Dong, Shanghai, CN;
Haibo Xiao, Shanghai, CN;
Shuaibing Lin, Shanghai, CN;
Xinzhi Dai, Shanghai, CN;
OMNIVISION TECHNOLOGIES (SHANGHAI) CO., LTD., Shanghai, CN;
Abstract
The present invention provides an image sensor and a method for fabricating the image sensor. The image sensor includes a semiconductor substrate, photodiodes (PD), deep isolation trenches, first deep P-well blocks and second deep P-wells. The isolation trenches surrounds the PDs, and each of the isolation trenches is separated from any adjacent isolation trenches at a crossing where they would have crossed each other if they further extended. The first deep P-wells blocks have projections on the semiconductor substrate, which encompass projections of said separated portions of the isolation trenches on the semiconductor substrate. The first P-well blocks can be formed using only one photomask, resulting in a reduction in cost.